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Oshima, Takeshi; Onoda, Shinobu; Iwamoto, Naoya; Makino, Takahiro; Arai, Manabu*; Tanaka, Yasunori*
Physics and Technology of Silicon Carbide Devices, p.379 - 402, 2012/10
SiC is regarded as a promising candidate for electronic devices used in harsh radiation environments because of its high radiation tolerance. Radiation effects on SiC devices are reviewed. Firstly, the Total Ionizing Dose (TID) effect in Metal-Oxide-Semiconductor (MOS) Field Effect Transistors (FETs) is introduced. Then, the radiation hardness of SiC based transistors such as MOSFETs, Metal-Semiconductor (MES) FETs, Static Induction Transistors (SITs) is discussed from the point of view of 
-ray irradiation effects. Transient current induced in SiC pn diodes by heavy ions incidence, which is important information on the single event effects (SEEs), is also expressed.
Kawasuso, Atsuo; Weidener, M.*; Redmann, F.*; Frank, T.*; Sperr, P.*; K
gel, G.*; Yoshikawa, Masahito; Ito, Hisayoshi; Krause-Rehberg, R.*; Triftsh
user, W.*; et al.
Silicon Carbide, p.563 - 584, 2004/00
no abstracts in English
Ito, Hisayoshi; Aoki, Yasushi; Oshima, Takeshi; Yoshikawa, Masahito; Nashiyama, Isamu; Okumura, Hajime*; Yoshida, Sadafumi*
Silicon Carbide and Related Materials 1995 (Institute of Physics Conf. Series,No. 142), 0, p.549 - 552, 1996/00
no abstracts in English
Oshima, Takeshi; Yoshikawa, Masahito; Ito, Hisayoshi; Takahashi, Tetsuo*; Okumura, Hajime*; Yoshida, Sadafumi*; Nashiyama, Isamu
Silicon Carbide and Related Materials 1995 (Institute of Physics Conf. Series,No. 142), 0, p.801 - 804, 1996/00
no abstracts in English
Yoshikawa, Masahito; Ito, Hisayoshi; Oshima, Takeshi; Nashiyama, Isamu; Okumura, Hajime*; Yoshida, Sadafumi*
Silicon Carbide and Related Materials 1995 (Institute of Physics Conf. Series,No. 142), p.741 - 744, 1996/00
no abstracts in English
Ito, Hisayoshi; Yoshikawa, Masahito; Nashiyama, Isamu*; *; Okumura, Hajime*; Yoshida, Sadafumi*
Amorphous and Crystalline Silicon Carbide III and Other Group IV-IV Materials, p.143 - 148, 1992/00
no abstracts in English
Yoshikawa, Masahito; Morita, Yosuke; Ito, Hisayoshi; Nashiyama, Isamu*; *; Okumura, Hajime*; Yoshida, Sadafumi*
Amorphous and Crystalline Silicon Carbide IV, p.393 - 398, 1992/00
no abstracts in English
